收藏本站
Ordering number : EN6260C
3LN01C
N-Channel Small Signal MOSFET
30V, 0.15A, 3.7 Ω , Single CP
Features
http://onsemi.com
?
?
?
Low ON-resistance
Ultrahigh-speed switching
2.5V drive
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
30
±10
0.15
Unit
V
V
A
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
IDP
PD
Tch
Tstg
PW ≤ 10 μ s, duty cycle ≤ 1%
0.6
0.25
150
--55 to +150
A
W
°C
°C
This product is designed to “ESD immunity < 200V * ”, so please take care when handling.
* Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Ordering & Package Information
unit : mm (typ)
7013A-013
Device
3LN01C-TB-E
Package
CP
SC-59, TO-236,
SOT-23, TO-236AB
Shipping
3,000
pcs./reel
memo
Pb-Free
2.9
3
0.1
3LN01C-TB-E
3LN01C-TB-H
3LN01C-TB-H
CP
SC-59, TO-236,
SOT-23, TO-236AB
3,000
pcs./reel
Pb-Free
and
Halogen Free
1
0.95
2
0.4
Packing Type: TB
Marking
1 : Gate
2 : Source
3 : Drain
CP
TB
Electrical Connection
YA
3
1
2
Semiconductor Components Industries, LLC, 2013
June, 2013
61213 TKIM TC-00002936/62712 TKIM/33006PE MSIM TB-00002198/21400 TS(KOTO) TA-1987 No.6260-1/6
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
3LN01S-TL-E MOSFET N-CH 30V 150MA SMCP
3LP01C-TB-H MOSFET P-CH 30V 100MA CP
3LP01M-TL-H MOSFET P-CH 30V 100MA MCP
3LP01SS-TL-H MOSFET P-CH 30V 400MA SMCP
4010-KFOBDEV-434 KIT DEV SI4010 SI4355 RX 434MHZ
4021-CW 4021 ELARA MOON MODULE WHT
404R5KL1.0 POSITION SENSOR LIN 5K OHM
4140-00 EVAL KIT FOR 4140
相关代理商/技术参数
3LN01M 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
3LN01M_06 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
3LN01M-AL3-R 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:N CHANNEL SILICON MOSFET GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS
3LN01MG-AL3-R 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:N CHANNEL SILICON MOSFET GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS
3LN01ML-AL3-R 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:N CHANNEL SILICON MOSFET GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS
3LN01M-TL-E 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
3LN01M-TL-H 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
3LN01N 制造商:未知厂家 制造商全称:未知厂家 功能描述: